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Ships within 48 hours · Estimated delivery Jul 31 - Aug 5
or whole chip basis
Series: Automotive
Riedon Power SMD Film Resistor
High 1MHz GBW
Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AIT:E | Dynamic random access memory | DEX GE IGBT Line Side 1.5 or whole chip basisMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E AIT: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch
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