Micron Technology DRAM SDRAM-DDR2, Part #: MT40A2G4SA-062E:R TR | Dynamic random access memory | DEX Phillips A ferroelectric random access memory

A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM

SKU : GEC:5328696

The AR0144 produces extraordinarily clear

- Support for cascading mode that enables the creation of a unified

Micron Technology DRAM SDRAM-DDR2, Part #: MT40A2G4SA-062E:R TR | Dynamic random access memory | DEX Phillips A ferroelectric random access memoryMicron Technology DRAM SDRAM DDR4, Part #: MT40A2G4SA 062E: R TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register