Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E:E TR | Dynamic random access memory | DEX Level 2 Dynamic Power Down

Dynamic Power Down

Accurate 1V Enable Pin Threshold

98960325431

The BCM56450 supports flexible Quality of Service (QoS)

Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E:E TR | Dynamic random access memory | DEX Level 2 Dynamic Power DownMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E: E TR features: VDD = VDDQ = 1. 2V + 60mvVPP = 2. 5V, 125mV, + 250mVOn die, internal, adjustable VREFDQ generation1. 2V pseudo open drain I ORefresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each8n bit prefetch architectureProgrammable data strobe preamblesData strobe preamble training Command Address latency (CAL)Multipurpose register READ