Micron Technology DRAM , Part #: MT49H16M36SJ-18 IT:B | Dynamic random access memory | DEX D3NDGBG0EFC0EFC 1V 484-PIN FBGA

1V 484-PIN FBGA

SKU : ACR:KP

An open-drain power-good signal indicates when the output is within 93% to 107% of its nominal voltage

solar power inverters

Micron Technology DRAM , Part #: MT49H16M36SJ-18 IT:B | Dynamic random access memory | DEX D3NDGBG0EFC0EFC 1V 484-PIN FBGAMicron Technology DRAM , Part #: MT49H16M36SJ 18 IT: B features: 533 MHz DDR operation (1. 067 Gb s pin data rate) 38. 4 Gb s peak bandwidth (x36 at 533 MHz clock frequency) Organization 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 8 internal banks for concurrent operation and maximum bandwidth Reduced cycle time (15ns at 533 MHz) Nonmultiplexed addresses (address multiplexing option available) SRAM type interface Programmable READ latency (RL), row cycle