Micron Technology DRAM SDRAM-DDR4, Part #: MT40A512M8SA-062E IT:F TR | Dynamic random access memory | DEX Wireless Keyboard/Mouse Combo 25°C resolution and an internal

25°C resolution and an internal voltage reference

Number of I/O: 83

01Ohm to 51kOhms • Power Rating to 35Watt • Resistance Tolerances to ±1% • TCR to ±50ppm/°C • Load Stability to 1% • Low Ohm Values for Current Sense Applications • Exceptional Pulse Performance • Solder Reflow Secure at 260°C / 20s • Isolated Back Plate

The product has been authorized by FDA under an EUA for use as source control by the general public as well as by HCP in healthcare settings as to help prevent the spread of infection or illness during the COVID-19 pandemic

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A512M8SA-062E IT:F TR | Dynamic random access memory | DEX Wireless Keyboard/Mouse Combo 25°C resolution and an internalMicron Technology DRAM SDRAM DDR4, Part #: MT40A512M8SA 062E IT: F TR features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data